BB305C Datasheet, PDF (5/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB305C
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
R_G = 68 kΩ
4V
24 _{f = 1 kHz}
3V
18
2V
12
6
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
24
R_G = 100 kΩ
f = 1 kHz
18
4V
3V
2V
12
6
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Noise Figure vs. Gate Resistance
4
V_DS = 5 V
V_G1 = 5 V
3 ^VG2S ^{= 4 V}
f = 200 MHz
2
1
0
10 20
50 100 200 500 1000
Gate Resistance R_G (kΩ)
Rev.6.00 Aug 10, 2005 page 5 of 9
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
24
R_G = 82 kΩ
f = 1 kHz
4V
3V
18
2V
12
6
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Power Gain vs. Gate Resistance
40
35
30
25
20
V_DS = 5 V
15
V_G1 = 5 V
V_G2S = 4 V
f = 200 MHz
10
10 20 50
100 200
500 1000
Gate Resistance R_G (kΩ)
Power Gain vs. Drain Current
40
35
30
25
20
V_DS = 5 V
V_G1 = 5 V
V_G2S = 4 V
15
R_G = variable
f = 200 MHz
10
0
5 10 15 20 25 30
Drain Current I_D (mA)