BB301C Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB301C
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
25 ^{RG = 82 kΩ}
f = 1 kHz
20
4V
3V
15
10
2V
5
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
20
V_DS = 5 V
16 ^{RG = 150 kΩ}
f = 1 kHz
12
4V
3V
2V
8
4
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Noise Figure vs. Gate Resistance
4
V_DS = 5 V
V_G1 = 5 V
3 ^VG2S ^{= 4 V}
f = 200 MHz
2
1
0
10 20
50 100 200 500 1000
Gate Resistance R_G (kΩ)
Rev.3.00 Aug 10, 2005 page 5 of 7
Forward Transfer Admittance
vs. Gate1 Voltage
30
V _DS = 5 V
25 ^{RG = 100 kΩ}
f = 1 kHz
20
4V
3V
15
2V
10
5
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Power Gain vs. Gate Resistance
30
25
20
15
10
V_DS = 5 V
5 ^{VG1 = 5 V}
V_G2S = 4 V
0 ^{f = 200 MHz}
10 20 50
100 200
500 1000
Gate Resistance R_G (kΩ)
Power Gain vs. Drain Current
30
25
20
15
10 ^{VDS = 5 V}
V_G1 = 5 V
5
V_G2S = 4 V
R = variable
f = 200 MHz
0
5 10 15 20 25 30
Drain Current I_D (mA)