2SK3447_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

2SK3447
Main Characteristics
Power vs. Temperature Derating
1.6
1.2
0.8
0.4
0
0
50
100
150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
2.5
8V
10 V
2.0
1.5
6V
5V
4.5 V
4V
3.5 V
1.0
3V
0.5
V_GS = 2.5 V
Pulse Test
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
3
Pulse Test
2
I_D = 1 A
1
0.5 A
0.2 A
0
0
5
10
15
20
Gate to Source Voltage V_GS (V)
Rev.7.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
10
3
1
0.3
0.1
0.03
0.01
10 _µs
PW
DC _Operation
Operation in
this area is
= ₁₀
(Tc ₌
ms _(1shot)
25°C)
limited by R_DS(on)
100 µs
1 ms
0.003
Ta = 25°C
0.001
0.1 0.3 1 3 10 30 100 500
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
V_DS = 10 V
Pulse Test
4
3
Tc = –25°C
25°C
75°C
2
1
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
5
V_GS =10 V
2
4V
1
0.5
0.2
0.1
0.1
0.3
1
3
10
Drain Current I_D (A)