2SK2978 Datasheet, PDF (5/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2978
Reverse Drain Current vs.
Source to Drain Voltage
5
4V
4
2.5 V
3
V_GS = 0
2
1
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
4V
50 Ω
V_DD
= 10 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(off)
tf
Rev.5.00 Sep. 07, 2005 page 5 of 6