2SK1761 Datasheet, PDF (5/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1761
Reverse Drain Current vs.
Source to Drain Voltage
20
Pulse Test
16
12
8
4 _{VGS = 10 V}
0, – 5 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1.0
0.5
Tc = 25°C
0.3 _0.2
0.1
0.1 _0.05
0.02
0.03
1 ^{shot Pulse}
0.01
0.01
10 µ
100 µ
θch – c(t) = γs(t) • θch – c
θch – c = 1.67°C / W, Tc = 25°C
P_DM
D = ^PW
T
T ^PW
1m
10 m
100 m
1
10
Pulse Width PW (S)
Rev.2.00 Sep 07, 2005 page 5 of 6