2SJ557A_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

2SJ557A
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
<R>
FORWARD BIAS SAFE OPERATING AREA
-100
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
-10
-1
-0.1
-0.01
R^D_(V^S(GonS) =Li^{−m1it0edV)}
ID(pulse)
PW _{= 1i00 μs}
1_{i msi}
ID(DC)
TC = 25°C
Single Pulse
Power
Dissipation
1_i0
1_{i00 msi}
5s
Limited
ms_i
Mounted on FR-4 board of
2500 mm² x 1.6 mm,
copper foil 100%, t ≤ 5 sec
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
<R>
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Without board
100
10
Mounted on FR-4 board of 2500 mm² x 1.6 mm,
copper foil 100%, t ≤ 5 sec
1
Single Pulse
0.1
100 μ
1m
10 m 100 m
1
10
PW - Pulse Width - s
100
1000
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-12
-10
−4.0 V
-8
−4.5 V
VGS = −10 V
-6
-4
-2
Pulsed
0
0
-0.5
-1
-1.5
-2
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
-10
VDS = −10 V
Pulsed
-1
-0.1
-0.01
-0.001
TA = −25°C
25°C
75°C
125°C
150°C
-0.0001
0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5
VGS - Gate to Source Voltage - V
Data Sheet D19059EJ2V0DS
3