|
2SJ531 Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching | |||
|
◁ |
2SJ531
Reverse Drain Current vs.
Source to Drain Voltage
â20
â16
â10 V
â12
â5 V
â8
VGS = 0, 5 V
â4
Pulse Test
0
0 â0.4 â0.8 â1.2 â1.6 â2.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
IAP = â18 A
VDD = â25 V
40
duty < 0.1 %
Rg ⥠50 â¦
30
20
10
0
25 50
75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
Tc = 25°C
0.3
0.2
0.1
0.1
0.05
0.03 0.02
0.011shot pulse
0.01
10 µ
100 µ
θch â c (t) = γ s (t) ⢠θch â c
θch â c = 4.17°C/W, Tc = 25°C
PDM
D = PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Vin
â15 V
Avalanche Test Circuit
VDS
Monitor
Rg
50 â¦
L
IAP
Monitor
D.U.T
VDD
Avalanche Waveform
EAR =
1
2
⢠L ⢠IAP2 â¢
VDSS
VDSS â VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Rev.3.00 Sep 07, 2005 page 5 of 7
|
▷ |