2SH26 Datasheet, PDF (5/10 Pages) Hitachi Semiconductor – Silicon N Channel IGBT High Speed Power Switching

Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
2SH26
Maximum Safe Operation Area
100
30
10
3
1
0.3
0.1
0.03
Ta = 25 °C
0.01
1 3 10 30 100 300 1000
Collector to Emitter Voltage V_CE (V)
Reverse Bias SOA
50
20
10
5
2
1
0.5
0.2
Tc = 25 °C
0.1
0
200
400
600
800
Collector to Emitter Voltage V_CE (V)
Typical Output Characteristics
20
15 V 14 V
Pulse Test
16
13 V
12
12 V
8
11 V
4
VGS = 10 V
0
2
4
6
8
10
Collector to Emitter Voltage V_CE (V)