2SC4093 Datasheet, PDF (5/9 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

2SC4093
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Free Air
2
f = 1.0 GHz
200
1
0.5
100
0.2
0
50
100
150
Ambient Temperature TA (˚C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
20
10
0.5 1
5 10
50
Collector Current IC (mA)
MAXIMUM GAIN/INSERTION
POWER GAIN vs. FREQUENCY
30
VCE = 10 V
IC = 20 mA
Gmax
20
|S21e|²
10
0.1
1
2
5
10
20
Collector to Base Voltage VCB (V)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
VCE = 10 V
10
5
2
1
0.6
1
2
5
10
20
40
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
20
VCE = 10 V
f = 1.0 GHz
10
0
0.1
0.2
0.5
1.0
2.0
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
0
0.5 1 2
5 10 20
50
Collector Current IC (mA)
Data Sheet PU10519EJ01V0DS
3