2SB1571 Datasheet, PDF (5/6 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR

2SB1571
−1000
−500
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
. _{IC = 50 IB}
−200
−100
TA = 125˚C
75˚C
25˚C
−50
−20
0˚C
−25˚C
−10
−5
−2
−1
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2
IC - Collector Current - A
−5 −10
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
1000 _{VCE = −10 V}
500
200
100
50
20
10
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2
IE - Emitter Current - A
−5 −10
SWITCHING CHARACTERISTICS
2
VCC
IC =
=20−1_. 0I_BV
IB1 = −IB2
1
0.5
ton
0.2
tstg
0.1
0.05
tf
−0.1 −0.2 −0.5 −1 −2 −5 −10
IC - Collector Current - A
BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
−10 _{. IC = 20 IB}
−5
−1
−0.5
−0.2
−0.1
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2
IC - Collector Current - A
−5 −10
OUTPUT CAPACITANCE vs.
REVERSE VOLTAGE
1000 _{f = 1.0 MHz}
500
200
100
50
20
10
−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
VCB - Collector to Base Voltage - V
Data Sheet D15930EJ2V0DS
3