R5F21346UNFP Datasheet, PDF (46/61 Pages) Renesas Technology Corp – The R8C/34U Group has data flash (1 KB × 4 blocks) with the background operation (BGO)

R8C/34U Group
5. Electrical Characteristics
Table 5.17 Electrical Characteristics (1) [4.2 V ≤ VCC ≤ 5.5 V]
Symbol
Parameter
Condition
Standard
Unit
Min. Typ. Max.
VOH
Output “H” Other than XOUT
Drive capacity High VCC = 5 V IOH = −20 mA VCC − 2.0 —
VCC
V
voltage
Drive capacity Low VCC = 5 V IOH = −5 mA VCC − 2.0 —
VCC
V
XOUT
VCC = 5 V
IOH = −200 µA 1.0
—
VCC
V
VOL
Output “L” Other than XOUT
Drive capacity High VCC = 5 V IOL = 20 mA
—
— 2.0 V
voltage
Drive capacity Low VCC = 5 V IOL = 5 mA
—
— 2.0 V
XOUT
VCC = 5 V
IOL = 200 µA
—
— 0.5 V
VT+-VT- Hysteresis _{INT0, INT1, INT2,}
0.1
1.2
—
V
INT3, INT4,
KI0, KI1, KI2, KI3,
TRAIO,TRCIOA,
TRCIOB, TRCIOC,
TRCIOD, TRFI,
USB_VBUS,
TRCTRG, TRCCLK,
ADTRG, RXD0,
RXD1, RXD2, RXD3,
CLK0, CLK1, CLK2,
CLK3, CTS2, SSI,
SCL, SDA, SSO,
SSCK, SCS
RESET
0.1
1.2
—
V
IIH
IIL
RPULLUP
RfXIN
Input “H” current
Input “L” current
Pull-up resistance
Feedback XIN
resistance
VI = 5 V, VCC = 5.0 V
VI = 0 V, VCC = 5.0 V
VI = 0 V, VCC = 5.0 V
—
— 5.0 µA
—
— −5.0 µA
25
50 100 kΩ
—
0.3 — MΩ
VRAM
RAM hold voltage
During stop mode
1.8
—
—
V
Note:
1. 4.2 V ≤ VCC ≤ 5.5 V, Topr = −20 to 85 °C (N version)/-40 to 85 °C (D version), and f(XIN) = 20 MHz, unless otherwise
specified.
R01DS0039EJ0100 Rev.1.00
Feb 25, 2011
Page 46 of 58