R8C3MQ_15 Datasheet, PDF (43/50 Pages) Renesas Technology Corp – RENESAS MCU

R8C/3MQ Group
5. Electrical Characteristics
Table 5.18 Electrical Characteristics (3) [1.8 V ≤ VCC < 2.7 V]
Symbol
Parameter
Condition
VOH
Output “H” voltage
VOL
Output “L” voltage
VT+-VT- Hysteresis
IIH
Input “H” current
IIL
Input “L” current
RPULLUP Pull-up resistance
RfXIN Feedback resistance
RfXCIN Feedback resistance
VRAM RAM hold voltage
P0_4, P1, P3_0,
P3_1, P3_3 to P3_5,
P3_7, P4_3 to P4_5
P0_4, P1, P3_0,
P3_1, P3_3 to P3_5,
P3_7, P4_3 to P4_5
INT0, INT1, INT3, KI0,
KI1, KI2, KI3, KI4,
KI6, KI7, TRAIO,
TRCIOA, TRCIOB,
TRCIOC, TRCIOD,
TRCTRG, TRCCLK,
RXD0, CLK0, SSI,
SCL, SDA, SSO
RESET
XIN
XCIN
Drive capacity High IOH = −2 mA
Drive capacity Low IOH = −1 mA
Drive capacity High IOL = 2 mA
Drive capacity Low IOL = 1 mA
VCC = 2.15 V
VCC = 2.15 V
VI = 2.15 V, VCC = 2.15 V
VI = 0 V, VCC = 2.15 V
VI = 0 V, VCC = 2.15 V
During stop mode
Standard
Unit
Min.
Typ. Max.
VCC − 0.5 — VCC
V
VCC − 0.5 — VCC
V
—
— 0.5 V
—
— 0.5 V
0.05
0.20 —
V
0.05
0.20 —
V
—
— 4.0 µA
—
— −4.0 µA
70
140 300 kΩ
—
0.3 — MΩ
—
8
— MΩ
1.8
— 3.6 V
Note:
1. 1.8 V ≤ VCC < 2.7 V, Topr = −20°C to 85°C, and f(XIN) = 16 MHz, unless otherwise specified.
R01DS0044EJ0200 Rev.2.00
Jun 29, 2012
Page 43 of 47