R8C34C Datasheet, PDF (42/57 Pages) Renesas Technology Corp – RENESAS MCU

R8C/34C Group
5. Electrical Characteristics
Table 5.17 Electrical Characteristics (1) [4.2 V ≤ Vcc ≤ 5.5 V]
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ. Max.
VOH
Output “H” Other than XOUT
Drive capacity High VCC = 5V IOH = −20 mA VCC − 2.0 −
VCC
V
voltage
Drive capacity Low VCC = 5V IOH = −5 mA VCC − 2.0 −
VCC
V
XOUT
VCC = 5V
IOH = −200 µA 1.0
−
VCC
V
VOL
Output “L” Other than XOUT
Drive capacity High VCC = 5V IOL = 20 mA
−
voltage
Drive capacity Low VCC = 5V IOL = 5 mA
−
−
2.0
V
−
2.0
V
XOUT
VCC = 5V
IOL = 200 µA
−
−
0.5
V
VT+-VT-
Hysteresis
INT0, INT1, INT2,
INT3, INT4,
KI0, KI1, KI2, KI3,
TRAIO, TRBO,
TRCIOA, TRCIOB,
TRCIOC, TRCIOD,
TRDIOA0, TRDIOB0,
TRDIOC0, TRDIOD0,
TRDIOA1, TRDIOB1,
TRDIOC1, TRDIOD1,
TRCTRG, TRCCLK,
ADTRG,
RXD0, RXD1, RXD2,
CLK0, CLK1, CLK2,
SSI, SCL, SDA, SSO
0.1
1.2
−
V
RESET
0.1
1.2
−
V
IIH
Input “H” current
VI = 5 V, VCC = 5.0 V
−
−
5.0 µA
IIL
Input “L” current
VI = 0 V, VCC = 5.0 V
−
−
−5.0 µA
RPULLUP Pull-up resistance
VI = 0 V, VCC = 5.0 V
25
50 100 kΩ
RfXIN
Feedback XIN
resistance
−
0.3
−
MΩ
RfXCIN
Feedback XCIN
resistance
−
8
−
MΩ
VRAM RAM hold voltage
During stop mode
1.8
−
−
V
Note:
1. 4.2 V ≤ VCC ≤ 5.5 V at Topr = −20 to 85°C (N version) / −40 to 85°C (D version), f(XIN) = 20 MHz, unless otherwise specified.
R01DS0007EJ0100 Rev 1.00
Aug. 24, 2010
Page 42 of 54