UPA678TB Datasheet, PDF (4/8 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = −20.0 V, VGS = 0 V
Gate Leakage Current
Gate Cut-off Voltage ^Note
Forward Transfer Admittance ^Note
Drain to Source On-state Resistance ^Note
IGSS
VGS(off)
| yfs |
RDS(on)1
VGS = m12.0 V, VDS = 0 V
VDS = −10.0 V, ID = −1.0 mA
VDS = −10.0 V, ID = −0.20 A
VGS = −4.5 V, ID = −0.20 A
RDS(on)2 VGS = −4.0 V, ID = −0.20 A
RDS(on)3 VGS = −2.5 V, ID = −0.15 A
Input Capacitance
Ciss
VDS = −10.0 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz
Turn-on Delay Time
td(on) VDD = −10.0 V, ID = −0.20 A
Rise Time
tr
VGS = −4.0 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Body Diode Forward Voltage
VF(S-D) IF = 0.25 A, VGS = 0 V
Note Pulsed: PW ≤ 350 µs, Duty cycle ≤ 2%
TEST CIRCUIT SWITCHING TIME
D.U.T.
RG
PG.
VGS(−)
0
τ
τ = 1µs
Duty Cycle ≤ 1%
RL
VDD
VGS(−)
VGS
Wave Form
10%
0
VDS(−)
90%
VDS
VDS
0
Wave Form
td(on)
90%
VGS
90%
10% 10%
tr td(off)
tf
ton
toff
µ PA678TB
MIN.
−0.8
0.2
TYP.
−1.3
0.6
1.17
1.25
2.25
29
15
3
23
39
50
33
0.88
MAX.
−1.0
m10
−1.8
1.45
1.55
2.98
UNIT
µA
µA
V
S
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
V
2
Data Sheet G16607EJ1V0DS