RQJ0202VGDQA Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

RQJ0202VGDQA
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–700
–600
Pulse Test
Tc = 25°C
–500
–400
–300
–200
I_D = –2.7 A
–100 –1 A
–1.4 A
0 ^{–0.5 A}
0
–2
–4
–6
–8 –10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Case Temperature
200
I_D = –2.7 A
180
–1.4 A
160
140
120
–1 A
100
80
–25
–0.5 A
0 25 50
Pulse Test
V_GS = –2.5 V
75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
–25°C
1
25°C
Tc = 75°C
0.1
0.01
–0.01
–0.1
Pulse Test
V_DS = –10 V
–1
–10
Drain Current I_D (A)
Preliminary
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
Tc = 25°C
V_GS = –2.5 V
100
–4.5 V
–10 V
10
–0.1
–1
–10
–100
Drain Current I_D (A)
Static Drain to Source on State Resistance
vs. Case Temperature
120
Pulse Test
V_GS = –4.5 V
I_D = –2.7 A
–1.4 A
100
80
–1 A
–0.5 A
60
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
–10000
–1000
Pulse Test
V_GS = 0 V
V_DS = –20 V
–100
–10
–1
–0.1
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0291EJ0400 Rev.4.00
Mar 28, 2011
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