RJK6006DPP-E0 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – 600V - 5A - MOS FET High Speed Power Switching

RJK6006DPP-E0
Typical Capacitance vs.
Drain to Source Voltage (Typical)
10000
1000
V_GS = 0
f = 1 MHz
Ta = 25°C
Ciss
100
Coss
10
Crss
1
0
100
200
300
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
16
V_GS = 0
Ta = 25 °C
Pulse Test
12
8
4
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Preliminary
Dynamic Input Characteristics (Typical)
800
I_D = 5 A
Ta = 25 °C
16
V_GS
600
V_DS
400
12
V_DD = 480 V
300 V
100 V
8
200
4
V_DD = 480 V
300 V
100 V
0
0
8
16 24 32 40
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V_DS = 10 V
4
3
I_D = 10 mA
1 mA
2
0.1 mA
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0610EJ0100 Rev.1.00
Mar 16, 2012
Page 4 of 6