RJK4002DPD_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – 400V - 3A - MOS FET High Speed Power Switching

RJK4002DPD
Typical Capacitance vs.
Drain to Source Voltage
1000
V_GS = 0
f = 1 MHz
Ciss
100
Coss
10
Tc = 25°C
1
0
40 80
Crss
120 160 200
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
5
V_GS = 0
Ta = 25°C
4 Pulse Test
3
2
1
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Preliminary
Dynamic Input Characteristics (Typical)
800
I_D = 3 A
V_GS
16
Ta = 25°C
600
12
400
V_DS
V_DD = 100 V
200 V ₈
320 V
200
0
0
V_DD = 320 V
200 V
100 V
2
4
6
4
0
8
10
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5.0
4.5
I_D = 10 mA
4.0
3.5
1 mA
3.0
0.1 mA
2.5
V_DS = 10 V
2.0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0835EJ0210 Rev.2.10
Jan 29, 2014
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