RJK0660DPA_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – 60V, 40A, 5.1mΩ max. N Channel Power MOS FET High Speed Power Switching

RJK0660DPA
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
I_D = 20 A
8
6
V_GS = 10 V
4
2
0
–25 0 25 50 75 100 125 150
Case Temperature Tc ( °C)
Dynamic Input Characteristics
100
20
I_D = 40 A
80
60 _VDS
40
V_DD = 50 V
25 V
10 V
16
V_GS
12
8
20
V_DD = 50 V
4
25 V
10 V
0
0
0
12 24 36 48 60
Gate Charge Qg (nC)
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
I_AP = 40 A
V_DD = 20 V
40
duty < 0.1 %
Rg ≥ 50 Ω
30
20
10
0
25 50 75 100 125 150
Channel Temperature Tch ( °C)
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
10000
V_GS = 0 V
f = 1 MHz
Ciss
1000
Coss
100
0
Crss
10 20 30 40 50 60
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
50
10 V
40
Pulse Test
30
20
10
V_GS = 0 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
R07DS0346EJ0300 Rev.3.00
Apr 09, 2013
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