RJK0454DPB Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

RJK0454DPB
Preliminary
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery time
Notes: 4. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V_(BR)DSS
40
—
—
V I_D = 10 mA, V_GS = 0 V
I_GSS
—
— 0.1 A V_GS = 20 V, V_DS = 0 V
I_DSS
—
—
1
A V_DS = 40 V, V_GS = 0 V
V_GS(off)
2.0
—
4.0
V V_DS = 10 V, I_D = 1 mA
R_DS(on)
—
3.9
4.9
m I_D = 20 A, V_GS = 10 V ^Note4
|y_fs|
—
40
—
S
I_D = 20 A, V_DS = 10 V ^Note4
Ciss
— 2000 —
pF V_DS = 10 V, V_GS = 0 V,
Coss
— 620 —
pF ^{f = 1 MHz}
Crss
— 150 —
pF
Rg
—
0.5
—

Qg
—
25
—
nC V_DD = 10 V, V_GS = 10 V,
Qgs
—
9.0
—
nC ^ID ^{= 40 A}
Qgd
—
3.0
—
nC
t_d(on)
t_r
t_d(off)
t_f
V_DF
t_rr
—
10
—
ns V_GS = 10 V, I_D = 20 A,
—
5.2
—
ns ^VDD ^{ 10 V, R}L ^{= 0.5 ,}
—
30
—
ns ^{Rg = 4.7 }
—
6.5 —
ns
—
0.8 1.1
V
I_F = 40 A, V_GS = 0 V ^Note4
—
37
—
ns I_F = 40 A, V_GS = 0 V
di_F/ dt = 100 A/ s
REJ03G1877-0200 Rev.2.00 Mar 04, 2010
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