RJK03M0DPA Datasheet, PDF (4/7 Pages) Renesas Technology Corp – 30V, 65A, 1.9mΩmax N Channel Power MOS FET

RJK03M0DPA
Static Drain to Source On State Resistance
vs. Temperature
5.0
Pulse Test
4.0
I_D = 5 A, 10 A, 20 A
3.0
V_GS = 4.5 V
2.0
1.0
10 V
5 A, 10 A, 20 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
50
20
I_D = 65 A
40
V_GS
16
V_DD = 25 V
30
10 V
12
V_DS
20
8
10
V_DD = 25 V
4
10 V
0
0
0
20 40 60 80 100
Gate Charge Qg (nC)
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
24
80
60
40
20
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Preliminary
100000
Typical Capacitance vs.
Drain to Source Voltage
30000
10000
Ciss
3000
1000
Coss
300 _{VGS = 0}
f = 1 MHz
100
0
10
Crss
20
30
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
100
10 V
Pulse Test
80
5V
60
40
20
V_GS = 0, –5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
R07DS0764EJ0200 Rev.2.00
Feb 08, 2013
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