RJK0355DSP_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

RJK0355DSP
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
30
20
V_GS = 4.5 V
10
I_D = 2 A, 5 A, 10 A
10 V
0
2 A, 5 A, 10 A
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
50
20
I_D = 12 A
V_GS
40
30
V_DS
16
V_DD = 25 V
10 V
12
20
8
10
4
V_DD = 25 V
10 V
0
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
I_AP = 9 A
16
V_DD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
12
8
4
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
Ciss
300
100
Coss
30 _{VGS = 0}
f = 1 MHz
10
0
10
Crss
20
30
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
50
10 V
Pulse Test
40
5V
30
20
10
V_GS = 0, –5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
REJ03G1650-0301 Rev.3.01 Apr 24, 2008
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