RJK0346DPA_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – 30V, 65A, 2.0m max. N Channel Power MOS FET High Speed Power Switching

RJK0346DPA
Static Drain to Source On State Resistance
vs. Temperature
10
Pulse Test
8
6
4
I_D = 5 A, 10 A, 20 A
V_GS = 4.5 V
2
10 V
0
5 A, 10 A, 20 A
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
50
I_D = 65 A
20
V_GS
40
V_DD = 25 V
16
10 V
30
12
V_DS
20
8
10
V_DD = 25 V
4
10 V
0
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Maximum Avalanche Energy vs.
Channel Temperature Derating
200
I_AP = 35 A
160
V_DD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
120
80
40
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Preliminary
10000
3000
1000
300
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
100
30 _{VGS = 0}
f = 1 MHz
10
0
10
20
30
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
100
10 V
80
5V
Pulse Test
60
40
20
V_GS = 0, –5V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
R07DS0911EJ0400 Rev.4.00
Mar 19, 2013
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