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RJK0328DPB Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching
RJK0328DPB
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
8
6
4
ID = 5 A, 10 A, 20 A
VGS = 4.5 V
2
10 V
0
5 A, 10 A, 20 A
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
50
ID = 60 A
40
VDD = 25 V
10 V
20
VGS
16
30
12
VDS
20
8
10
VDD = 25 V
4
10 V
0
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
IAP = 30 A
80
VDD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
60
40
20
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
10000
3000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
300
100
Coss
Crss
30 VGS = 0
f = 1 MHz
10
0
10
20
30
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
100
10 V
80
5V
Pulse Test
60
40
20
VGS = 0, –5V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
REJ03G1637-0400 Rev.4.00 Apr 10, 2008
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