RJH60M1DPE_15 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – 600V - 8A - IGBT Application: Inverter

RJH60M1DPE
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
4
3
I_C = 16 A
2
8A
Tc = 25°C
Pulse Test
1
8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Typical Transfer Characteristics
20
Ta = 150°C
16
25°C
12
8
4
V_CE = 10 V
Pulse Test
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8
I_C = 10 mA
6
4
1 mA
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
R07DS0529EJ0300 Rev.3.00
May 25, 2012
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
4
I_C = 16 A
3
8A
2
Tc = 150°C
Pulse Test
1
8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
5
V_GE = 15 V
Pulse Test
4
I_C = 16 A
3
8A
2
3A
1
0
−25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
Frequency Characteristics (Typical)
6
5
0
Collector current wave
4
(Square wave)
3
2
1
Tj = 125°C, Tc = 90°C, V_CE = 400 V
0 ^{VGE = 15 V, Rg = 5 Ω, duty = 50%}
1
10
100
1000
Frequency f (kHz)
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