RJH60F7DPQ-A0_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – 600 V - 50 A - IGBT High Speed Power Switching

RJH60F7DPQ-A0
Forward Current vs. Forward Voltage (Typical)
100
80
60
40
20
V_GE = 0 V
Ta = 25°C
Pulse Test
0
0
1
2
3
4
C-E Diode Forward Voltage V_CEF (V)
Dynamic Input Characteristics (Typical)
800
I_C = 50 A
Ta = 25°C
V_CE
600
400
16
V_GE
12
V_CC = 600 V
300 V
8
200
0
0
4
V_CC = 600 V
300 V
0
40 80 120 160 200
Gate Charge Qg (nc)
Preliminary
10000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
1000
100
Coes
V_GE = 0 V
f = 1 MHz Ta = 25°C
10
0 50 100 150 200
Cres
250 300
Collector to Emitter Voltage V_CE (V)
R07DS0328EJ0200 Rev.2.00
Jul 22, 2011
Page 4 of 7