RJH60F7BDPQ-A0_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – 600V - 50A - IGBT High Speed Power Switching

RJH60F7BDPQ-A0
Forward Current vs. Forward Voltage (Typical)
100
V_GE = 0 V
Ta = 25°C
80 Pulse Test
60
40
20
0
0
1
2
3
4
5
C-E Diode Forward Voltage V_CEF (V)
Dynamic Input Characteristics (Typical)
800
I_C = 50 A
Ta = 25°C
V_CE
600
400
16
V_GE
12
V_CC = 600 V
300 V
8
200
0
0
4
V_CC = 600 V
300 V
0
40 80 120 160 200
Gate Charge Qg (nC)
Preliminary
10000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
1000
100
Coes
V_GE = 0 V
f = 1 MHz Ta = 25°C
10
0 50 100 150 200
Cres
250 300
Collector to Emitter Voltage V_CE (V)
R07DS0633EJ0100 Rev.1.00
Feb 17, 2012
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