RJH60F5DPK_11 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F5DPK
Forward Current vs. Forward Voltage (Typical)
100
V_GE = 0 V
Ta = 25°C
80 Pulse Test
60
40
20
0
0
1
2
3
4
5
C-E Diode Forward Voltage V_CEF (V)
Dynamic Input Characteristics (Typical)
800
16
V_GE
V_CE
600
400
12
V_CC = 300 V
600 V
8
200
0
0
V_CC = 600 V
4
300 V
I_C = 40 A
Ta = 25°C
0
20 40 60 80 100
Gate Charge Qg (nc)
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
10000
V_GE = 0 V
f = 1 MHz
Cies
1000
100
Coes
Ta = 25°C
Cres
10
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
R07DS0055EJ0300 Rev.3.00
Nov 24, 2010
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