RJH60D6DPK_15 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – 600V - 40A - IGBT Application: Inverter

RJH60D6DPK
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
4
I_C = 40 A
80 A
3
2
1
4
8
12
16
20
Gate to Emitter Voltage V_GE (V)
Typical Transfer Characteristics
160
Tc = 25°C
120
150°C
80
40
V_CE = 10 V
Pulse Test
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
6
I_C = 10 mA
4
1 mA
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Case Temparature Tc (°C)
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 150°C
Pulse Test
4
I_C = 40 A
80 A
3
2
1
4
8
12
16
20
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
2.4
V_GE = 15 V
2.2 ^{Pulse Test}
I_C = 80 A
2.0
1.8
40 A
1.6
20 A
1.4
1.2
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
40
30
0
Collector current wave
(Square wave)
20
Tj = 125°C
Tc = 90°C
10 V_CE = 400 V
V_GE = 15 V
Rg = 5 Ω
duty = 50%
0
1
10
100
Frequency f (kHz)
1000
R07DS0164EJ0400 Rev.4.00
Apr 19, 2012
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