RJH60D5DPQ-A0 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – 600 V - 37 A - IGBT Application: Inverter

RJH60D5DPQ-A0
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
8
Ta = 25°C
Pulse Test
6
I_C = 37 A
75 A
4
2
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Transfer Characteristics (Typical)
150
125
Ta = 25°C
150°C
100
75
50
25
V_CE = 10 V
Pulse Test
0
0
4
8
12
16
Gate to Emitter Voltage V_GE (V)
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
8
Ta = 150°C
Pulse Test
6
I_C = 37 A
75 A
4
2
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Diode Forward Characteristics (Typical)
120
100
Ta = 25°C
150°C
80
60
40
20
V_CE = 0 V
Pulse Test
0
0
1
2
3
4
Forward Voltege V_F (V)
R07DS0527EJ0100 Rev.1.00
Aug 26, 2011
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