RJH60D5DPM_15 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – 600V - 37A - IGBT Application: Inverter

RJH60D5DPM
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
4
I_C = 37 A
75 A
3
2
1
4
8
12
16
20
Gate to Emitter Voltage V_GE (V)
Transfer Characteristics (Typical)
150
125
Tc = 25°C
150°C
100
75
50
25
V_CE = 10 V
Pulse Test
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
I_C = 10 mA
6
4
1 mA
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Case Temparature Tc (°C)
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 150°C
Pulse Test
4
I_C = 37 A
75 A
3
2
1
4
8
12
16
20
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
2.8
V_GE = 15 V
Pulse Test
2.4
I_C = 75 A
2.0
37 A
1.6
18.5 A
1.2
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
12
10
0
Collector current wave
8
(Square wave)
6
4
2 ^{Tj = 125°C, Tc = 90°C}
V_CE = 400 V, V_GE = 15 V
Rg = 5 Ω, duty = 50%
0
1
10
100
Frequency f (kHz)
1000
R07DS0174EJ0200 Rev.2.00
Apr 19, 2012
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