RJH60D0DPQ-E0 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – 600V - 22A - IGBT Application: Inverter

RJH60D0DPQ-E0
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
4
I_C = 22 A
45 A
3
2
1
4
8
12
16
20
Gate to Emitter Voltage V_GE (V)
Typical Transfer Characteristics
80
Tc= 25°C
60
150°C
40
20
V_CE = 10 V
Pulse Test
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
6
I_C = 10 mA
4
1 mA
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Case Temparature Tc (°C)
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 150°C
Pulse Test
4
I_C = 22 A
45 A
3
2
1
4
8
12
16
20
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
2.4
2.2
I_C = 45 A
2.0
1.8
22 A
1.6
11 A
1.4
1.2 _{VGE = 15 V}
Pulse Test
1.0
−25 0 25 50
75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
20
16
0
Collector current wave
(Square wave)
12
8
4
Tj = 125°C, Tc = 90°C, V_CE = 400 V
0 ^{VGE = 15 V, Rg = 5 Ω, duty = 50%}
1
10
100
1000
Frequency f (kHz)
R07DS0737EJ0100 Rev.1.00
Apr 19, 2012
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