RJH60A85RDPE_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – 600V - 15A - IGBT Application: Inverter

RJH60A85RDPE
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
6
Tc = 25°C
Pulse Test
5
4
3
2
I_C = 30 A
15 A
1
8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Typical Transfer Characteristics
60
50
40
30
Tc = 150°C
20
25°C
10
V_CE = 10 V
Pulse Test
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8
I_C = 10 mA
6
4
1 mA
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Case Temparature Tc (°C)
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
6
Tc = 150°C
Pulse Test
5
4
3
I_C = 30 A
2
15 A
1
8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
3.0
V_GE = 15 V
Pulse Test
2.6
2.2
I_C = 30 A
1.8
15 A
1.4
7.5 A
1.0
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
14
12
0
10
Collector current wave
(Square wave)
8
6
Tj = 125°C
4 ^{Tc = 90°C}
V_CE = 300 V
2
V_GE = 15 V
Rg = 5 Ω
duty = 50%
0
1
10
100
Frequency f (kHz)
1000
R07DS0809EJ0200 Rev.2.00
Jul 12, 2012
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