RJH1BF7RDPQ-80_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH1BF7RDPQ-80
Forward Current vs.Forward Voltage (Typical)
30
V_GE = 0 V
Ta = 25°C
25 _{Pulse Test}
20
15
10
5
0
0
2
4
6
8
C-E Diode Forward Voltage V_ECF (V)
Dynamic Input Characteristics (Typical)
800
16
V_GE
V_CE
600
V_CC = 600 V
300 V
12
400
8
200
0
0
V_CC = 600 V
300 V
40 80 120
4
I_C = 35 A
Ta = 25°C
0
160 200
Gate Charge Qg (nC)
Switching Characteristics (Typical) (2)
10000
V_CC = 600 V, V_GE = 15 V
I_C = 35 A, Ta = 25°C, Resistive load
1000
tf
100
tr
td(off)
td(on)
10
1
10
100
Gate Resistance Rg (Ω)
Preliminary
10000
1000
Typical Capacitance vs.
Colloctor to Emitter Voltage
Cies
100
Coes
10
Cres
V_GE = 0 V
f = 1 MHz
Ta = 25°C
1
0 50 100 150 200 250 300
Colloctor to Emitter Voltage V_CE (V)
Switching Characteristics (Typical) (1)
1000
tf
td(off)
100
td(on)
10
tr
V_CC = 600 V, V_GE = 15 V
Rg = 5 Ω, Ta = 25°C, Resistive load
1
1
10
100
Colloctor Current I_C (A)
Switching Characteristics (Typical) (3)
1000
tf
td(off)
100
tr
td(on)
V_CC = 600 V, V_GE = 15 V
10 ^{IC = 35 A, Rg = 5 Ω, Resistive load}
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
R07DS0394EJ0100 Rev.1.00
May 16, 2011
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