RJF0612DPE Datasheet, PDF (4/8 Pages) Renesas Technology Corp – 60V - 50A - N Channel Thermal FET Power Switching

RJF0612DPE
Static Drain to Source on State Resistance
vs. Temperature
14
Pulse Test
12
5A
I_D = 25, 10 A
10
8 _{VGS = 4 V}
5A
6
10 A
I_D = 25 A
4
V_GS = 10 V
2
-50 -25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
1000
di / dt = 50 A / μs
V_GS = 0, Ta = 25°C
100
10
0.1
1
10
100
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30
5V
20
V_GS = 0 V
10
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Target Specifications
Forward Transfer Admittance vs.
Drain Current
1000
V_DS = 10 V
Pulse Test
100
Tc = 25°C
75°C
10
1
0.1
0.1
1
10
100
Drain Current I_D (A)
1000
Switching Characteristics
100
tr
10
tf
td(off)
td(on)
V_GS = 10 V, V_DD = 30 V
PW = 300 μs, duty ≤ 1%
1
0.1
1
10
100
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
1000
Coss
100
0 10 20 30 40 50 60
Drain to Source Voltage V_DS (V)
R07DS0903EJ0100 Rev.1.00
Nov 01, 2012
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