PS7901D-1A_15_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – NEPOC Series. (OCMOS FET) 4-PIN SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE (0.75 pF)

Preliminary document
Specifications in this document are tentative and subject to change.
PS7901D-1A
ELECTRICAL CHARACTERISTICS (T_A = 25°C)
Parameter
Symbol
Diode Forward Voltage
V_F
Reverse Current
I_R
MOS FET Off-state Leakage Current 1 I_{Loff 1}
Off-state Leakage Current 2 I_{Loff 2}
Output Capacitance
C_out
Coupled LED On-state Current
I_Fon
On-state Resistance 1
R_{on 1}
On-state Resistance 2
Turn-on Time^{*1, 2}
Turn-off Time^{*1, 2}
R_{on 2}
t_on
t_off
Isolation Resistance
R_I-O
Isolation Capacitance
C_I-O
Notes: *1. Test Circuit for Switching Time
Conditions
I_F = 5 mA
V_R = 5 V
V_L = 35 V
V_L = 40 V
V_L = 0 V, f = 1 MHz , t < 1 s
I_L = 120 mA
I_F = 5 mA, I_L = 10 mA
I_F = 5 mA, I_L = 120 mA
I_F = 5 mA, V_O = 5 V,
R_L = 500 Ω, PW ≥ 1 ms
V_I-O = 0.5 kV_DC
V = 0 V, f = 1 MHz
IF
Pulse Input
VL
Input
Chapter Title
MIN. TYP. MAX. Unit
1.1
1.4
V
5.0
μA
0.03 0.3
nA
0.1
1.0
0.75 1.05
pF
4.0
mA
9
12
16
Ω
9
12
16
0.04
0.5
ms
0.1
0.5
10⁹
Ω
0.3
pF
50%
0
Input monitor
Rin
VO monitor
VO = 5 V
Output
RL
ton
90%
10%
toff
*2. The turn-on time and turn-off time are specified as input-pulse width ≥ 1 ms.
Be aware that when the device operates with an input-pulse width less than 10 ms, the turn-on time and turn-
off time will increase.
R08DS0034EJ0001 Rev.0.01
Feb 17, 2011
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