PA2560_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Dual N-CHANNEL MOSFET FOR SWITCHING

μ PA2560
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance ^Note
Drain to Source On-state Resistance ^Note
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Body Diode Forward Voltage ^Note
Note Pulsed
SYMBOL
TEST CONDITIONS
IDSS
VDS = 30 V, VGS = 0 V
IGSS
VGS = ±16 V, VDS = 0 V
VGS(off)
VDS = 10 V, ID = 1 mA
| yfs |
VDS = 10 V, ID = 2 A
RDS(on)1
VGS = 10 V, ID = 2 A
RDS(on)2
VGS = 4.5 V, ID = 2 A
Ciss
VDS = 10 V,
Coss
VGS = 0 V,
Crss
f = 1.0 MHz
td(on)
VDD = 15 V, ID = 2 A,
tr
VGS = 10 V,
td(off)
RG = 6 Ω
tf
QG
VDD = 24 V, VGS = 10 V,
ID = 4.5 A
VF(S-D)
IF = 4.5 A, VGS = 0 V
MIN.
1.0
1
TYP.
38
48
310
65
27
6
2.8
15
2.4
MAX.
1
±10
2.5
50
83
UNIT
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
6.6
nC
0.9
V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VGS
90%
ID
90%
ID
Wave Form
0 ^10%
td(on)
ID
tr td(off)
90%
10%
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet G19947EJ1V0DS