NP75N04YUG_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP75N04YUG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
250
200
150
100
50
VGS = 10 V
Pulsed
0
0
0.5
1
1.5
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
4
3.5
3
2.5
2
1.5
1
0.5
VDS = VGS
ID = 250 μA
0
-100
0
100
200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
VGS = 10 V
Pulsed
5
0
0.1
1
10
100
I_D - Drain Current - A
1000
R07DS0018EJ0100 Rev.1.00
Jul 01, 2010
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
0.1
0.01
0.001
1
TA = −55°C
25°C
75°C
125°C
175°C
VDS = 10 V
Pulsed
2
3
4
5
6
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
Ta = −55°C
25°C
75°C
125°C
175°C
10
1
0.1
VDS = 5V
Pulsed
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
ID = 75 A
37.5 A
15 A
5
0
0
5
10
15
20
V_GS - Gate to Source Voltage - V
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