NP50P03YDG_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP50P03YDG
-250
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-200
-150
VGS = −10 V
-100
−5 V
-50
Pulsed
-0
-0
-1
-2
-3
-4
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
-2
VDS = VGS
ID = −250 μA
-1.6
-1.2
-0.8
-0.4
0
-100
0
100
200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
30
Pulsed
25
20
15
10
VGS = −5 V
5
−10 V
0
-0.1
-1
-10
-100
-1000
I_D - Drain Current - A
R07DS0019EJ0200 Rev.2.00
Mar 16, 2011
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
-1000
-100
-10
-1
TA = −55°C
25°C
75°C
125°C
175°C
-0.1
-0.01
-0.001
-0
-1
-2
VDS = −10 V
Pulsed
-3
-4
-5
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
TA = −55°C
25°C
75°C
125°C
175°C
10
1
-0.1
VDS = −5 V
Pulsed
-1
-10
-100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
15
ID = −50 A
−25 A
−12.5 A
10
5
0
-0
-5
-10
-15
-20
V_GS - Gate to Source Voltage - V
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