NP35N04YUG_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP35N04YUG
120
110
100
90
80
70
60
50
40
30
20
10
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
Pulsed
0.5
1
1.5
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
4
3.5
3
2.5
2
1.5
1
0.5
VDS = VGS
ID = 250 μA
0
-100
0
100
200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
15
10
5
0
0.1
VGS = 10 V
Pulsed
1
10
100
1000
I_D - Drain Current - A
R07DS0016EJ0100 Rev.1.00
Jul 01, 2010
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
100
TA = −55°C
10
25°C
75°C
125°C
1
175°C
0.1
0.01
0.001
VDS = 10 V
Pulsed
2
3
4
5
6
7
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
Ta = −55°C
25°C
75°C
10
125°C
175°C
1
0.1
VDS = 5 V
Pulsed
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
15
ID = 35A
17.5 A
7A
10
5
Pulsed
0
0
5
10
15
20
V_GS - Gate to Source Voltage - V
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