NP33N06YDG_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP33N06YDG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
VGS = 10 V
60
5V
40
20
Pulsed
0
0
0.5
1
1.5
2
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
2.5
VDS = VGS
ID = 250 μA
2
1.5
1
0.5
0
-100
0
100
200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
30
25
20
15
VGS = 5 V
10
10 V
5
Pulsed
0
0.1
1
10
100
I_D - Drain Current - A
R07DS0015EJ0100 Rev.1.00
Jul 01, 2010
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
100
TA = −55°C
10
25°C
75°C
125°C
1
175°C
0.1
0.01
0.001
VDS = 10 V
Pulsed
1
2
3
4
5
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
TA = −55°C
25°C
75°C
125°C
10
175°C
1
0.1
VDS = 5 V
Pulsed
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
35
30
25
20
ID = 33 A
16.5 A
15
6.6 A
10
5
Pulsed
0
0
5
10
15
20
V_GS - Gate to Source Voltage - V
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