NP23N06YDG_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP23N06YDG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
40
VGS = 10 V
5V
30
20
10
Pulsed
0
0
0.5
1
1.5
2
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
2.5
2
1.5
1
0.5
VDS = VGS
ID = 250 μA
0
-100
0
100
200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
Pulsed
45
40
35
30
25
VGS = 5 V
20
10 V
15
10
5
0
0.1
1
10
100
I_D - Drain Current - A
R07DS0014EJ0100 Rev.1.00
Jul 01, 2010
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
100
TA = −55°C
10
25°C
75°C
125°C
1
175°C
0.1
0.01
0.001
VDS = 10 V
Pulsed
1
2
3
4
5
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
TA = −55°C
25°C
75°C
125°C
10
175°C
1
0.1
VDS = 5 V
Pulsed
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
45
40
35
ID = 23 A
30
11.5 A
25
4.6 A
20
15
10
5 _Pulsed
0
0
5
10
15
20
V_GS - Gate to Source Voltage - V
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