NP180N055TUJ_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP180N055TUJ
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
800
700
600
500
400
300
200
VGS = 10 V
100
Pulsed
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
4.0
3.0
2.0
1.0
VDS = VGS
ID = 250 μA
0.0
-100 -50 0 50 100 150 200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
5
VGS = 10 V
Pulsed
4
3
2
1
0
1
10
100
1000
I_D - Drain Current - A
R07DS0181EJ0100 Rev.1.00
Dec 22, 2010
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
1000
100
TA = −55°C
10
25°C
75°C
1
150°C
175°C
0.1
0.01
0.001
VDS = 10 V
Pulsed
0
1
2
3
4
5
6
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
1000
TA= −55°C
25°C
100
75°C
10
1
1
150°C
175°C
VDS = 5 V
Pulsed
10
100
1000
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
5
4
ID = 180 A
90 A
36 A
3
2
1
Pulsed
0
0
5
10
15
20
25
V_GS - Gate to Source Voltage - V
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