NP16N04YUG Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP16N04YUG
60
50
40
30
20
10
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
Pulsed
0.5
1
1.5
2
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
4
VDS = VGS
3.5
ID = 250 μA
3
2.5
2
1.5
1
0.5
0
-100
-50
0
50
100
150
200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
40
35
30
25
20
15
10
5
VGS = 10 V
Pulsed
0
0.1
1
10
100
I_D - Drain Current - A
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
100
TA = −55 °C
10
−25 °C
25 °C
75 °C
1
125 °C
175 °C
0.1
0.01
VDS = 10 V
Pulsed
0.001
0
1
2
3
4
5
6
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
TA = −55 °C
−25 °C
25 °C
75 °C
10
125 °C
175 °C
1
0.1
0.1
VDS = 5 V
Pulsed
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
90
80
3.2 A
70
60
8A
50
40
ID = 12.8 A
30
20
10
0
0
Pulsed
5
10
15
20
V_GS - Gate to Source Voltage - V
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