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NP15P06SLG-E1-AY Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents | |||
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NP15P06SLG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
<R>
<R>
Zero Gate Voltage Drain Current
IDSS
Gate Leakage Current
IGSS
Gate to Source Threshold Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
Input Capacitance
Ciss
VDS = â60 V, VGS = 0 V
VGS = m20 V, VDS = 0 V
VDS = VGS, ID = â250 μA
VDS = â10 V, ID = â7.5 A
VGS = â10 V, ID = â7.5 A
VGS = â4.5 V, ID = â7.5 A
VDS = â10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Turn-on Delay Time
Crss
f = 1 MHz
td(on)
VDD = â30 V, ID = â7.5 A,
Rise Time
tr
VGS = â10 V,
Turn-off Delay Time
td(off)
RG = 0 Ω
Fall Time
Total Gate Charge
tf
QG
VDD = â48 V,
<R>
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
Qrr
VGS = â10 V,
ID = â15 A
IF = â15 A, VGS = 0 V
IF = â15 A, VGS = 0 V,
di/dt = â100 A/μs
Note Pulsed test PW ⤠350 μs, Duty Cycle ⤠2%
MIN.
â1.0
6
TYP.
â1.6
12
56
62
1100
150
100
7
5
100
65
23
3
7
0.96
37
45
MAX.
â10
m10
â2.5
70
95
1.5
UNIT
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = â20 â 0 V
â
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS(â)
0
Ï
Ï = 1 μs
Duty Cycle ⤠1%
RL
VDD
VGS(â)
VGS
Wave Form
0 10%
VDS(â)
90%
VDS
VDS
Wave Form 0
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = â2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D19078EJ2V0DS
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