NP110N055PUK_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP110N055PUK
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
400
300
200
100
0
0
V_GS = 10 V
Pulsed
0.2
0.4
0.6
0.8
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
0
–100 –50 0
V_DS = V_GS
I_D = 250 μA
50 100 150 200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
3
2
1
V_GS = 10 V
Pulsed
0
1
10
100
1000
I_D - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
TA = –55°C
25°C
85°C
150°C
175°C
0.1
0.01
0.001
0
V_DS = 10 V
Pulsed
1
2
3
4
5
6
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
100
TA = –55°C
25°C
85°C
150°C
175°C
10
V_DS = 5 V
Pulsed
1
1
10
100
1000
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
4
3
2
1
I_D = 55 A
Pulsed
0
0
5
10
15
20
V_GS - Gate to Source Voltage - V
R07DS0591EJ0100 Rev.1.00
Dec 12, 2011
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