N0400P_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

N0400P
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0
VGS = −4.5 V
−2.5 V
Pulsed
-0.5 -1 -1.5 -2 -2.5 -3
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-3
VDS = −10 V
-2.5
ID = −1 mA
-2
-1.5
-1
-0.5
0
-75 -25
25
75 125 175
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
70
60
50
40
30
20
10
0
-0.1
VGS = −2.5 V
−4.5 V
-1
Pulsed
-10
-100
ID - Drain Current - A
R07DS0500EJ0200 Rev.2.00
Aug 19, 2011
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
-100
-10
-1
−25°C
25°C
75°C
-0.1 125°C
150°C
Tch = −55°C
-0.01
-0.001
VDS = −10 V
Pulsed
0 -0.5 -1 -1.5 -2 -2.5 -3
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = −55°C
−25°C
25°C
10
1
0.1
-0.1
75°C
125°C
150°C
VDS = −10 V
Pulsed
-1
-10
ID - Drain Current - A
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
70
60
50
40
30
20
10
0
0
ID = −12 A
−7.5 A
−3 A
Pulsed
-2 -4 -6 -8 -10 -12
VGS - Gate to Source Voltage - V
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