HZU2.0BTRF-E Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Silicon Planar Zener Diode for Stabilizer

HZU Series
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Note: 1. With P.C. Board.
Pd *¹
Tj
Tstg
Symbol
Value
200
150
−55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
Zener Voltage
Type
HZU2.0
Grade
B
V_Z (V)*¹
Min
Max
1.90
2.20
Test
Condition
I_Z (mA)
5
HZU2.2
B
2.10
2.40
5
HZU2.4
B
2.30
2.60
5
HZU2.7
B
2.50
2.90
5
B1
2.50
2.75
B2
2.65
2.90
HZU3.0
B
2.80
3.20
5
B1
2.80
3.05
B2
2.95
3.20
HZU3.3
B
3.10
3.50
5
B1
3.10
3.35
B2
3.25
3.50
HZU3.6
B
3.40
3.80
5
B1
3.40
3.65
B2
3.55
3.80
HZU3.9
B
3.70
4.10
5
B1
3.70
3.97
B2
3.87
4.10
HZU4.3
B
4.01
4.48
5
B1
4.01
4.21
B2
4.15
4.34
B3
4.28
4.48
HZU4.7
B
4.42
4.90
5
B1
4.42
4.61
B2
4.55
4.75
B3
4.69
4.90
HZU5.1
B
4.84
5.37
5
B1
4.84
5.04
B2
4.98
5.20
B3
5.14
5.37
HZU5.6
B
5.31
5.92
5
B1
5.31
5.55
B2
5.49
5.73
B3
5.67
5.92
Note: 1. Tested with pulse (P_W = 40 ms)
Reverse Current
I_R (µA)
Test
Condition
Max
V_R (V)
120
0.5
120
0.7
120
1.0
120
1.0
50
1.0
20
1.0
10
1.0
10
1.0
10
1.0
10
1.0
5
1.5
5
2.5
(Ta = 25°C)
Dynamic Resistance
r_d (Ω)
Max
100
Test
Condition
I_Z (mA)
5
100
5
100
5
110
5
120
5
130
5
130
5
130
5
130
5
130
5
130
5
80
5
Rev.9.00 Jul 06, 2006 page 2 of 7