HZM7.5FA Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon Epitaxial Planar Zener Diode for Surge Absorb

HZM7.5FA
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Power dissipation
Pd *
Junction temperature
Tj
Storage temperature
Tstg
Note: Four device total, See Fig.2.
Value
Unit
200
mW
150
°C
–55 to +150
°C
Electrical Characteristics *¹
(Ta = 25°C)
Item
Symbol Min Typ Max
Zener voltage
V_Z
Reverse current
I_R
Capacitance
C
7.06 — 7.84
——2
— — 125
Dynamic resistance r_d
ESD-Capability *²
—
— — 30
30 — —
Notes: 1. Per one device.
2. Failure criterion ; I_R > 2 µA at V_R = 4 V.
Unit Test Condition
V
I_Z = 5 mA, 40 ms pulse
µA V_R = 4 V
pF V_R = 0 V, f = 1 MHz
Ω
I_Z = 5 mA
kV C = 150 pF, R = 330 Ω, Both forward and
reverse direction 10 pulse
Rev.2, Nov. 2002, page 2 of 6