HZM3.3WA Datasheet, PDF(4/8 Page) Renesas Technology Corp – SILICON EPITAXIAL PLANAR ZENER DIODE FOR SURGE ABSORB

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HZM3.3WA Datasheet, PDF (4/8 Pages) Renesas Technology Corp – SILICON EPITAXIAL PLANAR ZENER DIODE FOR SURGE ABSORB

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HZM3.3WA

Absolute Maximum Ratings

(Ta = 25Â°C)

Item

Symbol

Power dissipation

Pd *1

Junction temperature

Storage temperature

Tstg

Note 1. Two device total, See Fig.2.

Value

Unit

200

150

Â°C

â55 to +150

Â°C

Electrical Characteristics *1

(Ta = 25Â°C)

Item

Symbol Min Typ Max

Zener voltage

Reverse current

Dynamic resistance rd

ESD-Capability *2

3.10 â 3.50

â â 20

â â 130

30 â â

Notes: 1. Per one device.

2. Failure criterion ; IR > 20 ÂµA at VR = 1.0 V.

Unit Test Condition

IZ = 5 mA, 40 ms pulse

ÂµA VR = 1.0 V

â¦

IZ = 5 mA

kV C = 150 pF, R = 330 â¦, Both forward

and reverse direction 10 pulse

Rev.1, Nov. 2002, page 2 of 2

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