HVC133 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Pin Diode for High Frequency Switching

HVC133
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Power dissipation
Junction temperature
Storage temperature
Symbol
V
R
P
d
Tj
Tstg
Value
Unit
30
V
150
mW
125
°C
−55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Reverse voltage
Reverse current
Forward voltage
Capacitance
Forward resistance
Symbol Min
V_R
30
I_R
—
V_F
—
C₁
—
C₆
—
r_f
—
Typ
—
—
—
—
—
0.55
Max
—
100
0.85
1.0
0.9
0.7
Unit
V
nA
V
pF
Ω
Test Condition
I_R = 1µA
V_R = 25V
I_F = 2 mA
V_R = 1V, f = 1 MHz
V_R = 6V, f = 1 MHz
I_F = 2mA, f = 100 MHz
Rev.2, Feb. 2000, page 2 of 5